教員紹介

論文

• Significant Differences in BTI and TDDB Characteristics of Commercial Planar SiC-MOSFETs 2022/05/31

• Anomalous Behavior of Gate Current and TDDB Lifetime by Constant Voltage Stress in NO-Annealed SiC-MOSFETs 2021/01/21

• TDDB Lifetime Enhancement in SiC-MOSFETs under Gate-Switching Operations 2020/07/28

• Suppression of PBTI of SiC-MOSFETs Under 100 kHz Gate-Switching Operation by Using a Gate Off-Voltage of -5 V 2018/06/05

• Positive bias temperature instability of SiC-MOSFETs induced by gate-switching operation 2017/03/15

• Special features of Fowler-Nordheim stress degradation of SiC-MOSFETs 2016/03/08

• A Coarse-Graining Approach to Rate Equations of the Composite AC-NBTI Model 2015/10/06

• Interior and Surface Degradation Analysis of Multicrystalline Si Solar Cell Module Using Laser-Beam-Induced Current Technique 2018/03

• I-V, C-V法を用いたSiC-MOSFET Fowler-Nordheimストレス劣化の解析 2016/03

• Comprehensive TDDB lifetime prediction methodology for intrinsic and extrinsic failures in Cu interconnect dielectrics 2013/06

• Modeling of NBTI saturation effect and its impact on electric field dependence of the lifetime 2005

• Effect of nitrogen at SiO2/Si interface on reliability issues-negative-bias-temperature instability and Fowler-Nordheim-stress degradation 2002

• Gate Length Scalability of n-MOSFET's Down to 30nm: Comparison Between LDD and Non-LDD Structures 2000

• Fabrication of a Strain-Controlled SiGe/Ge MODFET With Ultrahigh Hole Mobility 1994

• Selective adsorption of HBO2 and Sb on a Si surface partially covered with ultrathin oxide 1994

• Elimination of misfit dislocations in Si1-xGex Heterostructures by limited-area molecular-beam epitaxial growth 1992

• Seed shape dependence of Si solid phase epitaxy: Preferential facet growth 1988